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\section{Resistive Micromegas} | ||
\label{chap:TPC_sec:micromegas} | ||
Most recent update: 2020-05-24\\ | ||
Most recent update: 2020-07-24\\ | ||
Contact person: Paul Colas (email: [email protected])\\ | ||
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\subsection{Introduction} | ||
First Micromegas prototypes were built with a micro-mesh stretched on a frame, and kept on top of | ||
a segmented anode at a fixed distance of \SI{50}{\micro\meter}. The gap is defined by spacers manufactured | ||
a segmented anode at a fixed distance of \SI{50}{\micro \meter}. The gap is defined by spacers manufactured | ||
by photo-lithographic techniques. Early tests confirmed that, due to ``hodoscope effect'' a resolution | ||
down to \SI{100}{\micro\meter} could not be reached \cite{Arogancia:2007pt}. This triggered studies with charge spreading | ||
down to \SI{100}{\micro \meter} could not be reached \cite{Arogancia:2007pt}. This triggered studies with charge spreading | ||
developed at Carleton University~\cite{Dixit:2003qg}. | ||
The first resistive material was an AlSi CERMET deposited on a Mylar foil and glued at | ||
\SI{90}{\degreeCelsius} with layer of melting polymer~\cite{2007NIMPA.581..254D}. Later on, a more robust resistive material was | ||
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In 2018, the endplate was equipped with 4 new modules with a DLC anode. Also, a new scheme was applied for the amplification High Voltage : the anode is set at a positive high voltage, and the Micromegas mesh is set to ground, as the surrounding supports. This allows a better field homogeneity near the module boundary and mitigates the distortions. In addition, this improved the operability of the detector : in case of breakdown of one module, its surface remains at ground, leaving the endplate equipotential. | ||
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\subsection{Engineering Challenges} | ||
The dE/dx resolution is shown in Fig.\ref{fig:fig440} as a function of track length. For the ILC TPC size, it is 5\%. | ||
\begin{figure} | ||
\centering | ||
\includegraphics[width=90mm]{Tracker/TPC_Bonn/plots/fig200116_dEdx_modCanvSize.eps} | ||
\caption{The dE/dx resolution as a function of the track length for \SI{5}{GeV} electrons. The red line is a power law.} | ||
\label{fig:fig440} | ||
\end{figure} | ||
The point resolution in the r$\phi$ and z coordinates are shown in Fig.\ref{fig:fig421}. The r$\phi$ resolution reaches \SI{65}{\micro\meter} at zero drift distance, and increases as expected with z, due to electron diffusion during the drift. | ||
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\begin{figure} | ||
\begin{minipage}{0.5\hsize} | ||
\begin{center} | ||
\includegraphics[width=76mm]{Tracker/TPC_Bonn/plots/fig200411_resoX_mod3_24Nov_B1_Ed230Vcm_Ed140Vcm} | ||
\end{center} | ||
\end{minipage} | ||
\begin{minipage}{0.5\hsize} | ||
\begin{center} | ||
\includegraphics[width=76mm]{Tracker/TPC_Bonn/plots/fig200411_resoZ_mod3_24Nov_B1_Ed230Vcm_Ed140Vcm} | ||
\end{center} | ||
\end{minipage} | ||
\caption{The distributions of the spatial and z resolution as a function of the measured drift length, in black for a drift field of \SI{230}{\volt\per\centi\meter} and in blue for \SI{140}{\volt\per\centi\meter} (average over the 24 pad-rows of a module).} | ||
\label{fig:fig421} | ||
\end{figure} | ||
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The requirements on the mechanical precision and flatness of the modules are very demanding to keep the systematics on the distortions below 10-20 microns. | ||
\subsection{Engineering Challenges} | ||
The requirements on the mechanical precision and flatness of the modules are very demanding to keep the systematical errors on the sagitta from distortions below 10-20 microns. | ||
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The adaptation of a gating device at a few cm from the end-plate, or integrated to each module, is a | ||
difficult engineering challenge if a minimal degradation of the performances is to be obtained. | ||
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