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add comments and clarity #11

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Nov 5, 2019
Merged

add comments and clarity #11

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Merged HGC_ageing_SampleBits_forProd_CMSSW_11_0_0_pre11 from reposito…
Nov 5, 2019
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Nov 5, 2019
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10 changes: 5 additions & 5 deletions SimCalorimetry/HGCalSimAlgos/interface/HGCalSiNoiseMap.h
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Original file line number Diff line number Diff line change
Expand Up @@ -8,7 +8,7 @@

/**
@class HGCalSiNoiseMap
@short derives from HGCalRadiation map to parse fluence parameters, provides Si-specific functions
@short derives from HGCalRadiation map to parse fluence parameters, provides Si-specific functions; see DN-19-045
*/
class HGCalSiNoiseMap : public HGCalRadiationMap {
public:
Expand Down Expand Up @@ -64,10 +64,10 @@ class HGCalSiNoiseMap : public HGCalRadiationMap {
std::vector<double> &getIleakParam() { return ileakParam_; }
std::vector<std::vector<double> > &getENCsParam() { return encsParam_; }
std::vector<double> &getLSBPerGain() { return lsbPerGain_; }
std::vector<double> &getMaxADCPerGain() { return maxADCPerGain_; }
std::vector<double> &getMaxADCPerGain() { return chargeAtFullScaleADCPerGain_; }

private:
//
//vector of three params, per sensor type: 0:120 [mum], 1:200, 2:300
std::vector<double> mipEqfC_, cellCapacitance_, cellVolume_;
std::vector<std::vector<double> > cceParam_;

Expand All @@ -87,10 +87,10 @@ class HGCalSiNoiseMap : public HGCalRadiationMap {
std::vector<std::vector<double> > encsParam_;

//lsb
std::vector<double> lsbPerGain_, maxADCPerGain_;
std::vector<double> lsbPerGain_, chargeAtFullScaleADCPerGain_;

//conversions
const double unitToMicro_ = 1e6;
const double unitToMicro_ = 1.e6;

//flags used to disable specific components of the Si operation parameters
bool ignoreFluence_, ignoreCCE_, ignoreNoise_;
Expand Down
28 changes: 16 additions & 12 deletions SimCalorimetry/HGCalSimAlgos/src/HGCalSiNoiseMap.cc
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Expand Up @@ -9,33 +9,34 @@ HGCalSiNoiseMap::HGCalSiNoiseMap() :
ignoreCCE_(false),
ignoreNoise_(false)
{
encsParam_.push_back({636., 15.6, 0.0328}); // q80fC
maxADCPerGain_.push_back(80.); // the num of fC (charge) which corresponds to the max ADC value
encsParam_.push_back({636., 15.6, 0.0328}); // q80fC: II order polynomial coefficients
chargeAtFullScaleADCPerGain_.push_back(80.); // the num of fC (charge) which corresponds to the max ADC value
encsParam_.push_back({1045., 8.74, 0.0685}); // q160fC
maxADCPerGain_.push_back(160.);
chargeAtFullScaleADCPerGain_.push_back(160.);
encsParam_.push_back({1915., 2.79, 0.0878}); // q320fC
maxADCPerGain_.push_back(320.);

for (auto i : maxADCPerGain_)
chargeAtFullScaleADCPerGain_.push_back(320.);

// adc has 10 bits -> 1024 counts at max ( >0 baseline to be handled)
for (auto i : chargeAtFullScaleADCPerGain_)
lsbPerGain_.push_back(i / 1024.);

//fine
//fine sensors: 120 mum - 67: MPV of charge[number of e-]/mum for a mip in silicon; srouce PDG
const double mipEqfC_120 = 120. * 67. * qe2fc_;
mipEqfC_.push_back(mipEqfC_120);
const double cellCapacitance_120 = 50;
cellCapacitance_.push_back(cellCapacitance_120);
const double cellVolume_120 = 0.52 * (120.e-4);
cellVolume_.push_back(cellVolume_120);

//thin
//thin sensors: 200 mum
const double mipEqfC_200 = 200. * 70. * qe2fc_;
mipEqfC_.push_back(mipEqfC_200);
const double cellCapacitance_200 = 65;
cellCapacitance_.push_back(cellCapacitance_200);
const double cellVolume_200 = 1.18 * (200.e-4);
cellVolume_.push_back(cellVolume_200);

//thick
//thick sensors: 300 mum
const double mipEqfC_300 = 300. * 73. * qe2fc_;
mipEqfC_.push_back(mipEqfC_300);
const double cellCapacitance_300 = 45;
Expand Down Expand Up @@ -65,7 +66,7 @@ HGCalSiNoiseMap::SiCellOpCharacteristics HGCalSiNoiseMap::getSiCellOpCharacteris
SiCellOpCharacteristics siop;

//decode cell properties
int layer(cellId.layer());
int layer(cellId.layer());
unsigned int cellThick = cellId.type();
double cellCap(cellCapacitance_[cellThick]);
double cellVol(cellVolume_[cellThick]);
Expand All @@ -87,7 +88,7 @@ HGCalSiNoiseMap::SiCellOpCharacteristics HGCalSiNoiseMap::getSiCellOpCharacteris
cellId.layer(), cellId.waferU(), cellId.waferV(), cellId.cellU(), cellId.cellV(), true, true));
double radius2 = std::pow(xy.first, 2) + std::pow(xy.second, 2); //in cm

double radius = sqrt(radius2);
double radius = sqrt(radius2);
double radius3 = radius * radius2;
double radius4 = pow(radius2, 2);
radiiVec radii{{radius, radius2, radius3, radius4, 0., 0., 0., 0.}};
Expand All @@ -100,6 +101,7 @@ HGCalSiNoiseMap::SiCellOpCharacteristics HGCalSiNoiseMap::getSiCellOpCharacteris
}
else{
//lin+log parametrization
//cceParam_ are parameters as defined in equation (2) of DN-19-045
siop.cce = siop.fluence <= cceParam_[cellThick][0] ? 1. + cceParam_[cellThick][1] * siop.fluence
: (1. - cceParam_[cellThick][2] * siop.lnfluence) +
(cceParam_[cellThick][1] * cceParam_[cellThick][0] +
Expand Down Expand Up @@ -134,7 +136,9 @@ HGCalSiNoiseMap::SiCellOpCharacteristics HGCalSiNoiseMap::getSiCellOpCharacteris
if(ignoreNoise_) {
siop.noise=0.0;
}else {
double enc_s(encsParam_[gain][0] + encsParam_[gain][1] * cellCap + encsParam_[gain][2] * pow(cellCap, 2));
double enc_s(encsParam_[gain][0] +
encsParam_[gain][1] * cellCap +
encsParam_[gain][2] * pow(cellCap, 2));
double enc_p(encpScale_ * sqrt(siop.ileak));
siop.noise = hypot(enc_p, enc_s* encCommonNoiseSub_ ) * qe2fc_;
}
Expand Down